The overclocking memory module specialist, Walton Chaintech Corporation, today debuts the APOGEE GT Blazer DDR3 1800 4GB Low Voltage Memory Module. Supporting EPP 2.0 as well, APOGEE GT Blazer DDR3 1800 4GB kit attains the lowest voltage of 1.8V compared with other memory modules of similar speed in current market place for more power saving operation, and longer product life.

What makes this memory module a true DDR3 masterpiece? It performs not only high data rate but also is of low voltage as 1.8v to achieve a beautiful balance between higher system performance and reliability. Dual modules packaged in 4GB kit, APOGEE GT DDR3 1800 of CL latency of 8-8-8-24 can be easily utilized for increasing the operation efficiency for power users.

APOGEE GT Blazer DDR3 1800 4GB kit has earned a performance over 28.8GB/sec on the EVEREST Memory bandwidth read and write test, providing the excellent level professional memory product quality. In addition, in accordance to the high speed of 1800MHz, the cooling performance is particularly enhanced by its famous bridge-alike, patent-pending Cool It Smart™ heatsink design.

APOGEE GT DDR3 1800 is made of 8-layer PCB with 16 pc Samsung 128M8 chips, which are well known for their exceptional overclocking capability. Each chip is handpicked for meeting strict quality requirements. Not only that, all chips are manufactured of using Fine-Pitch Ball Grid Array (FBGA) packages to have better thermal dissipation and electrical efficiency.

Each APOGEE GT DDR3 memory module passed 100% burn in test for quality assurance and fully compatible with JEDEC standards, ensuring customers to enjoy an extreme user experience either for gaming or other multimedia applications with high computing needs. Retailed globally at a descent price, at APOGEE GT DDR3 1800 4GB kit becomes a perfect choice for power users who are seeking best cost and performance ratio.